NE85639-A

NE85639-A
Attribute
Description
Manufacturer Part Number
NE85639-A
Description
TRANSISTOR NPN 1GHZ SOT-143
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 9GHz
Noise Figure @ f 1.5dB ~ 2.1dB @ 1GHz
Gain 13.5dB
Power - Max 200mW
DC Current Gain (hFE) @ Ic, Vce 50 @ 20mA, 10V
Current - Collector (Ic) (Max) 100mA
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA

Description

Measures resistance at forward current 9GHz for LED or diode evaluation. Features a DC current gain hFE at Ic evaluated at 50 @ 20mA, 10V. Peak Vce(on) at Vge 50 @ 20mA, 10V for transistor parameters.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.