Attribute
Description
Manufacturer Part Number
MRF586
Manufacturer
Description
TRANS RF BIPO 1W 200MA TO39
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Voltage - Collector Emitter Breakdown (Max) | 17V | |
| Frequency - Transition | 3GHz | |
| Noise Figure @ f | - | |
| Gain | 13.5dB | |
| Power - Max | 1W | |
| DC Current Gain (hFE) @ Ic, Vce | 40 @ 50mA, 5V | |
| Current - Collector (Ic) (Max) | 200mA | |
| Mounting Type | - | |
| Package / Case | - |
Description
Measures resistance at forward current 3GHz for LED or diode evaluation. Features a DC current gain hFE at Ic evaluated at 40 @ 50mA, 5V. Peak Vce(on) at Vge 40 @ 50mA, 5V for transistor parameters.
