PD20010S-E

PD20010S-E
Attribute
Description
Manufacturer Part Number
PD20010S-E
Manufacturer
Description
TRANS RF N-CH FET POWERSO-10RF
Manufacturer Lead Time
51 weeks

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Product Attributes

Type Description
Category
Transistor Type LDMOS
Frequency 2GHz
Gain 11dB
Voltage - Test 13.6V
Current Rating 5A
Noise Figure -
Current - Test 150mA
Power - Output 10W
Voltage - Rated 40V
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Description

Measures resistance at forward current 2GHz for LED or diode evaluation. Shop now for premium quality electronic components at competitive prices with fast shipping.

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