C2M0160120D
Data Sheet
Attribute
Description
Manufacturer Part Number
C2M0160120D
Manufacturer
Description
SIC MOSFET N-CH 1200V 10A TO-247
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | SiCFET N-Channel, Silicon Carbide | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 17.7A | |
| Rds On (Max) @ Id, Vgs | 196 mOhm @ 10A, 20V | |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA | |
| Gate Charge (Qg) @ Vgs | 32.6nC @ 20V | |
| Input Capacitance (Ciss) @ Vds | 527pF @ 800V | |
| Power - Max | 125W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 |
Description
Measures resistance at forward current SiCFET N-Channel, Silicon Carbide for LED or diode evaluation. Peak Rds(on) at Id 196 mOhm @ 10A, 20V for MOSFET efficiency.
