IPD50R1K4CE

IPD50R1K4CE
Attribute
Description
Manufacturer Part Number
IPD50R1K4CE
Description
MOSFET
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 3.1A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 1nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 25W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Shop now for premium quality electronic components at competitive prices with fast shipping.

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