IPD90R1K2C3
Data Sheet
Attribute
Description
Manufacturer Part Number
IPD90R1K2C3
Manufacturer
Description
Transistor: N-MOSFET; unipolar; 900V; 5.1A; 83W; T
Manufacturer Lead Time
6 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 900V | |
| Current - Continuous Drain (Id) @ 25°C | 5.1A | |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.8A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 310µA | |
| Gate Charge (Qg) @ Vgs | 28nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 710pF @ 100V | |
| Power - Max | 83W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 1.2 Ohm @ 2.8A, 10V for MOSFET efficiency.
