IRFU1018EPBF

IRFU1018EPBF

Data Sheet

Attribute
Description
Manufacturer Part Number
IRFU1018EPBF
Description
Transistor: N-MOSFET; unipolar; HEXFET; 60V; 79A;
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Rds On (Max) @ Id, Vgs 8.4 mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) @ Vgs 69nC @ 10V
Input Capacitance (Ciss) @ Vds 2290pF @ 50V
Power - Max 110W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 8.4 mOhm @ 47A, 10V for MOSFET efficiency.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.