IXFH58N20Q

IXFH58N20Q
Attribute
Description
Manufacturer Part Number
IXFH58N20Q
Manufacturer
Description
Single N-Channel 200 V 40 mO 300 W Falnge Mount Power Mosfet...
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Rds On (Max) @ Id, Vgs 40 mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) @ Vgs 140nC @ 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max 300W
Mounting Type Through Hole
Package / Case TO-247-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 40 mOhm @ 29A, 10V for MOSFET efficiency.

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