Attribute
Description
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Stock: 62
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 331.50 | ₹ 331.50 |
Stock: 40
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 464.78 | ₹ 464.78 |
| 3 | ₹ 421.24 | ₹ 1,263.72 |
| 10 | ₹ 329.42 | ₹ 3,294.20 |
| 30 | ₹ 311.43 | ₹ 9,342.90 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) | |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 48nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2890pF @ 25V | |
| Power - Max | 480W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 270 mOhm @ 12A, 10V for MOSFET efficiency.


