Attribute
Description
Manufacturer Part Number
PHKD3NQ10T,518
Manufacturer
Description
MOSFET 2N-CH 100V 3A 8SOIC
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 3A | |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 633pF @ 20V | |
| Power - Max | 2W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 90 mOhm @ 1.5A, 10V for MOSFET efficiency.
