Attribute
Description
Manufacturer Part Number
STB60N55F3
Manufacturer
Description
STB60N55F Series N-Channel 55 V 8.5 mOhm STripFET? III Power...
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Stock: 1000
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 110.75 | ₹ 1,10,750.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 32A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 45nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2200pF @ 25V | |
| Power - Max | 110W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 8.5 mOhm @ 32A, 10V for MOSFET efficiency.
