Attribute
Description
Manufacturer Part Number
STP34NM60ND
Manufacturer
Description
STP34NM60ND Series 600 V 110 mOhm N-Channel MDmesh? II Power...
Note :
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Stock: 700
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2 | ₹ 700.48 | ₹ 1,400.96 |
| 10 | ₹ 642.74 | ₹ 6,427.40 |
| 40 | ₹ 540.51 | ₹ 21,620.40 |
| 100 | ₹ 490.34 | ₹ 49,034.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) | |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 14.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 80.4nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2785pF @ 50V | |
| Power - Max | 210W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 110 mOhm @ 14.5A, 10V for MOSFET efficiency.
