Attribute
Description
Manufacturer Part Number
STW55NM60ND
Manufacturer
Description
STW55NM60ND Series N-Channel 600 V 60 mOhm FDmesh II Power M...
Note :
GST will not be applied to orders shipping outside of India
Stock: 4200
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,141.60 | ₹ 1,141.60 |
| 5 | ₹ 1,063.03 | ₹ 5,315.15 |
| 20 | ₹ 906.84 | ₹ 18,136.80 |
| 50 | ₹ 812.18 | ₹ 40,609.00 |
Stock: 98
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,297.50 | ₹ 1,297.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) | |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 25.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 190nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 5800pF @ 50V | |
| Power - Max | 350W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 60 mOhm @ 25.5A, 10V for MOSFET efficiency.
