SI5457DC-T1-GE3

SI5457DC-T1-GE3
Attribute
Description
Manufacturer Part Number
SI5457DC-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 6A CHIPFET
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs 36 mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 10V
Power - Max 5.7W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 36 mOhm @ 4.9A, 4.5V for MOSFET efficiency.

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