SI5999EDU-T1-GE3

SI5999EDU-T1-GE3
Attribute
Description
Manufacturer Part Number
SI5999EDU-T1-GE3
Manufacturer
Description
MOSFET 2P-CH 20V 6A POWERPAK
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 59 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds 496pF @ 10V
Power - Max 10.4W
Mounting Type Surface Mount
Package / Case -

Description

Measures resistance at forward current 2 P-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 59 mOhm @ 3.5A, 4.5V for MOSFET efficiency.

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