SI7898DP-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI7898DP-T1-GE3
Manufacturer
Description
N CHANNEL MOSFET,
150V,
3A,
SOIC; Transi; N CHANNEL MOSFET,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 150V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 1.9W | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® SO-8 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 85 mOhm @ 3.5A, 10V for MOSFET efficiency.
