SI8472DB-T2-E1

SI8472DB-T2-E1
Attribute
Description
Manufacturer Part Number
SI8472DB-T2-E1
Manufacturer
Description
MOSFET N-CH 8V 3.3A MICRO
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
Rds On (Max) @ Id, Vgs 44 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs 18nC @ 8V
Input Capacitance (Ciss) @ Vds 630pF @ 10V
Power - Max 780mW
Mounting Type Surface Mount
Package / Case 6-UFBGA

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 44 mOhm @ 1.5A, 4.5V for MOSFET efficiency.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.