SI8483DB-T2-E1

SI8483DB-T2-E1
Attribute
Description
Manufacturer Part Number
SI8483DB-T2-E1
Manufacturer
Description
MOSFET P-CH 12V D-S MICROFOOT
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 8.7A (Ta)
Rds On (Max) @ Id, Vgs 26 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) @ Vds 1840pF @ 6V
Power - Max 2.77W
Mounting Type Surface Mount
Package / Case 6-UFBGA

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 26 mOhm @ 1.5A, 4.5V for MOSFET efficiency.

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