SIA439EDJ-T1-GE3

SIA439EDJ-T1-GE3
Attribute
Description
Manufacturer Part Number
SIA439EDJ-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V PPAK SC-70-6L
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs 16.5 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 69nC @ 8V
Input Capacitance (Ciss) @ Vds 2410pF @ 10V
Power - Max 3.5W
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 16.5 mOhm @ 5A, 4.5V for MOSFET efficiency.

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