Attribute
Description
Manufacturer Part Number
SIR422DP-T1-GE3
Manufacturer
Description
MOSFET,
N CH,
DIODE,
40V,
40A,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Continuous Drain (Id) @ 25°C | 20.5A (Ta), 40A (Tc) | |
| Rds On (Max) @ Id, Vgs | 6.6 mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 48nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1785pF @ 20V | |
| Power - Max | 34.7W | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® SO-8 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 6.6 mOhm @ 20A, 10V for MOSFET efficiency.
