Attribute
Description
Manufacturer Part Number
SIZ910DT-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V DUAL D-S
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | 2 N-Channel (Dual) Asymmetrical | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 22A, 32A | |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1500pF @ 15V | |
| Power - Max | 4.6W, 5.2W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerWDFN |
Description
Measures resistance at forward current 2 N-Channel (Dual) Asymmetrical for LED or diode evaluation. Peak Rds(on) at Id 5.8 mOhm @ 20A, 10V for MOSFET efficiency.
