Home Products Discrete Semiconductor Products Junction Field Effect Transistors On Semiconductor MMBFJ175LT1

MMBFJ175LT1

MMBFJ175LT1

Data Sheet

Attribute
Description
Manufacturer Part Number
MMBFJ175LT1
Manufacturer
ON SEMICONDUCTOR
Description
Junction Field Effect Transistors, 30V, 225mW
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 7mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 3V @ 10nA
Power - Max 225mW
Input Capacitance (Ciss) @ Vds 11pF @ 10V (VGS)
Resistance - RDS(On) 125 Ohm
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current P-Channel for LED or diode evaluation. Peak Rds(on) at Id 3V @ 10nA for MOSFET efficiency.

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