2N3439L
Data Sheet
Attribute
Description
Manufacturer Part Number
2N3439L
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
350V
Note :
GST will not be applied to orders shipping outside of India
Stock: 187
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 2,375.25 | ₹ 2,375.25 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 1A | |
| Voltage - Collector Emitter Breakdown (Max) | 350V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA | |
| Current - Collector Cutoff (Max) | 5µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V | |
| Power - Max | 800mW | |
| Frequency - Transition | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
Description
Measures resistance at forward current 5µA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 5µA (ICBO). Features a DC current gain hFE at Ic evaluated at 500mV @ 4mA, 50mA. Peak Vce(on) at Vge 1A for transistor parameters.
