2N3810
Data Sheet
Attribute
Description
Manufacturer Part Number
2N3810
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 PNP (Dual),...
Note :
GST will not be applied to orders shipping outside of India
Stock: 100
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,619.25 | ₹ 1,619.25 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | 2 PNP (Dual) | |
| Current - Collector (Ic) (Max) | 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA | |
| Current - Collector Cutoff (Max) | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100µA, 5V | |
| Power - Max | 350mW | |
| Frequency - Transition | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-78-6 Metal Can |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 250mV @ 100µA, 1mA. Peak Vce(on) at Vge 50mA for transistor parameters.
