PDTC114TT,215

PDTC114TT,215

Data Sheet

Attribute
Description
Manufacturer Part Number
PDTC114TT,215
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
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Stock:
9462

Distributor: 2

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 12.75 ₹ 12.75

Stock:
239

Distributor: 3

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 17.13 ₹ 17.13
10 ₹ 15.81 ₹ 158.10
25 ₹ 14.39 ₹ 359.75
100 ₹ 10.32 ₹ 1,032.00
250 ₹ 6.06 ₹ 1,515.00
500 ₹ 5.02 ₹ 2,510.00

Product Attributes

Type Description
Category
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V
Power - Max 250mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current 1µA for LED or diode evaluation. Offers a collector cutoff current rated at 1µA. Features a DC current gain hFE at Ic evaluated at 150mV @ 500µA, 10mA. Peak Vce(on) at Vge 100mA for transistor parameters.

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