Attribute
Description
Manufacturer Part Number
2N6517
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
500mA,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 350V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA | |
| Current - Collector Cutoff (Max) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V | |
| Power - Max | 625mW | |
| Frequency - Transition | 200MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Description
Features a DC current gain hFE at Ic evaluated at 1V @ 5mA, 50mA. Peak Vce(on) at Vge 500mA for transistor parameters.
