2N2102

2N2102
Attribute
Description
Manufacturer Part Number
2N2102
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 1A, 65V
Note : GST will not be applied to orders shipping outside of India

Stock:
15

Distributor: 6

Traceability

Lead Time: Not specified

Quantity Unit Price Ext. Price
15 ₹ 86.61 ₹ 1,299.15
100 ₹ 76.67 ₹ 7,667.00
300 ₹ 64.84 ₹ 19,452.00
750 ₹ 57.27 ₹ 42,952.50

Product Attributes

Type Description
Category
Transistor Type NPN
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 65V
Vce Saturation (Max) @ Ib, Ic 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
Power - Max 1W
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can

Description

Features a DC current gain hFE at Ic evaluated at 500mV @ 15mA, 150mA. Peak Vce(on) at Vge 1A for transistor parameters.

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