Attribute
Description
Manufacturer Part Number
BUR51
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
60A,
200V
Manufacturer Lead Time
51 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 60A | |
| Voltage - Collector Emitter Breakdown (Max) | 200V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 5A, 50A | |
| Current - Collector Cutoff (Max) | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 4V | |
| Power - Max | 350W | |
| Frequency - Transition | 16MHz | |
| Mounting Type | Chassis Mount | |
| Package / Case | TO-204AA, TO-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 1.5V @ 5A, 50A. Peak Vce(on) at Vge 60A for transistor parameters.
