MJE3055T

MJE3055T
Attribute
Description
Manufacturer Part Number
MJE3055T
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 10A, 60V
Note : GST will not be applied to orders shipping outside of India

Stock:
5094

Distributor: 6

Traceability

Lead Time: Not specified

Quantity Unit Price Ext. Price
40 ₹ 27.45 ₹ 1,098.00
1250 ₹ 24.14 ₹ 30,175.00

Stock:
2499

Distributor: 2

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 51.75 ₹ 51.75

Stock:
1000

Distributor: 12

Lead Time: Not specified


Quantity Unit Price Ext. Price
20 ₹ 56.80 ₹ 1,136.00

Stock:
229

Distributor: 1

Authorized

Lead Time: 3 Working Days


Quantity Unit Price Ext. Price
1 ₹ 63.19 ₹ 63.19

Product Attributes

Type Description
Category
Transistor Type NPN
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V
Power - Max 75W
Frequency - Transition 2MHz
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current 700µA for LED or diode evaluation. Offers a collector cutoff current rated at 700µA. Features a DC current gain hFE at Ic evaluated at 8V @ 3.3A, 10A. Peak Vce(on) at Vge 10A for transistor parameters.

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