Attribute
Description
Manufacturer Part Number
FDV303N
Manufacturer
Description
Transistor: N-MOSFET; unipolar; 25V; 680mA; 350mW;
Note :
GST will not be applied to orders shipping outside of India
Stock: 1000
Distributor: 12
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 525 | ₹ 7.20 | ₹ 3,780.00 |
Stock: 71632
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 26.25 | ₹ 26.25 |
Stock: 6167
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 32.94 | ₹ 32.94 |
| 10 | ₹ 22.72 | ₹ 227.20 |
| 100 | ₹ 9.47 | ₹ 947.00 |
| 1000 | ₹ 6.44 | ₹ 6,440.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 25V | |
| Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) | |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 500mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 2.3nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 50pF @ 10V | |
| Power - Max | 350mW | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 450 mOhm @ 500mA, 4.5V for MOSFET efficiency.
