Attribute
Description
Manufacturer Part Number
FQB4N80TM
Manufacturer
Description
MOSFET N-CH 800V 3.9A D2PAK
Note :
GST will not be applied to orders shipping outside of India
Stock: 1366
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 115.50 | ₹ 115.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 3.9A | |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.95A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 880pF @ 25V | |
| Power - Max | 3.13W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 3.6 Ohm @ 1.95A, 10V for MOSFET efficiency.
