Attribute
Description
Manufacturer Part Number
FQP27P06
Manufacturer
Description
Transistor: P-MOSFET; unipolar; -60V; -27A; 120W;
Note :
GST will not be applied to orders shipping outside of India
Stock: 4961
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 99.75 | ₹ 99.75 |
Stock: 1301
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 125.90 | ₹ 125.90 |
| 10 | ₹ 107.91 | ₹ 1,079.10 |
| 100 | ₹ 82.83 | ₹ 8,283.00 |
| 500 | ₹ 73.17 | ₹ 36,585.00 |
| 1000 | ₹ 57.74 | ₹ 57,740.00 |
| 2500 | ₹ 51.21 | ₹ 1,28,025.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) | |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 13.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1400pF @ 25V | |
| Power - Max | 120W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 70 mOhm @ 13.5A, 10V for MOSFET efficiency.
