Attribute
Description
Manufacturer Part Number
2N7635-GA
Manufacturer
Description
TRANS SJT 650V 4A TO-257
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 20,702.14 | ₹ 20,702.14 |
Stock: 1
Distributor: 1
Authorized
Lead Time: 3 Working Days
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 22,624.69 | ₹ 22,624.69 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | Silicon Carbide, Normally Off | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) | |
| Rds On (Max) @ Id, Vgs | 415 mOhm @ 4A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 324pF @ 35V | |
| Power - Max | 7W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-257-3 |
Description
Measures resistance at forward current Silicon Carbide, Normally Off for LED or diode evaluation. Peak Rds(on) at Id 415 mOhm @ 4A for MOSFET efficiency.
