GA03JT12-247
Data Sheet
Attribute
Description
Manufacturer Part Number
GA03JT12-247
Manufacturer
Description
TRANS SJT 1200V 3A TO-247AB
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Stock: 1
Distributor: 1
Authorized
Lead Time: 3 Working Days
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 553.58 | ₹ 553.58 |
Stock: 61
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 686.25 | ₹ 686.25 |
Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 845.31 | ₹ 845.31 |
| 25 | ₹ 824.49 | ₹ 20,612.25 |
| 100 | ₹ 738.35 | ₹ 73,835.00 |
| 250 | ₹ 658.83 | ₹ 1,64,707.50 |
| 500 | ₹ 571.75 | ₹ 2,85,875.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | Silicon Carbide, Normally Off | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) (95°C) | |
| Rds On (Max) @ Id, Vgs | 460 mOhm @ 3A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 91W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 |
Description
Measures resistance at forward current Silicon Carbide, Normally Off for LED or diode evaluation. Peak Rds(on) at Id 460 mOhm @ 3A for MOSFET efficiency.
