IPB049N06L3 G

IPB049N06L3 G

Data Sheet

Attribute
Description
Manufacturer Part Number
IPB049N06L3 G
Description
MOSFET N-CH 60V 80A TO263-3
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 80A
Rds On (Max) @ Id, Vgs 4.7 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 58µA
Gate Charge (Qg) @ Vgs 50nC @ 4.5V
Input Capacitance (Ciss) @ Vds 8400pF @ 30V
Power - Max 115W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 4.7 mOhm @ 80A, 10V for MOSFET efficiency.

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