IRF1902GPBF
Data Sheet
Attribute
Description
Manufacturer Part Number
IRF1902GPBF
Manufacturer
Description
MOSFET,
20V,
4.2A,
85 MOHM,
5 NC QG,
SO-8,
HALOGEN-FREE
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) | |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 4A, 4.5V | |
| Vgs(th) (Max) @ Id | 700mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 7.5nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 310pF @ 15V | |
| Power - Max | 2.5W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 85 mOhm @ 4A, 4.5V for MOSFET efficiency.
