SI3493BDV-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI3493BDV-T1-GE3
Manufacturer
Description
MOSFET P-CH D-S 20V 6-TSOP
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 27.5 mOhm @ 7A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 43.5nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 1805pF @ 10V | |
| Power - Max | 2.97W | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSOP (0.065", 1.65mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 27.5 mOhm @ 7A, 4.5V for MOSFET efficiency.
