Attribute
Description
Manufacturer Part Number
STY112N65M5
Manufacturer
Description
STY112N65M5 Series N-Channel 650 V 22 mOhm MDmesh V Power Mo...
Note :
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Stock: 223
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 2,535.00 | ₹ 2,535.00 |
Stock: 4
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 3,199.51 | ₹ 3,199.51 |
| 5 | ₹ 2,747.98 | ₹ 13,739.90 |
| 10 | ₹ 2,481.04 | ₹ 24,810.40 |
| 25 | ₹ 2,241.55 | ₹ 56,038.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) | |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 47A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 350nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 16870pF @ 100V | |
| Power - Max | 625W | |
| Mounting Type | Through Hole | |
| Package / Case | - |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 22 mOhm @ 47A, 10V for MOSFET efficiency.
