SI1902DL-T1-E3

SI1902DL-T1-E3
Attribute
Description
Manufacturer Part Number
SI1902DL-T1-E3
Manufacturer
Description
MOSFET, DUAL, N, 6-SC-70; Transistor Polarity:N Channel; Con...
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 660mA
Rds On (Max) @ Id, Vgs 385 mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 1.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 270mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363

Description

Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 385 mOhm @ 660mA, 4.5V for MOSFET efficiency.

Similar Products

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.