SI1912EDH-T1-E3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI1912EDH-T1-E3
Manufacturer
Description
MOSFET,
NN CH,
20V,
SOT363; Transistor Polarity:Dual N Chann...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 1.13A | |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 1.13A, 4.5V | |
| Vgs(th) (Max) @ Id | 450mV @ 100µA | |
| Gate Charge (Qg) @ Vgs | 1nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 570mW | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 280 mOhm @ 1.13A, 4.5V for MOSFET efficiency.
