SI3851DV-T1-E3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI3851DV-T1-E3
Manufacturer
Description
MOSFET P-CH 30V 1.6A 6-TSOP
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) | |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.8A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 3.6nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 830mW | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSOP (0.065", 1.65mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 200 mOhm @ 1.8A, 10V for MOSFET efficiency.
