SI3467DV-T1-E3

SI3467DV-T1-E3

Data Sheet

Attribute
Description
Manufacturer Part Number
SI3467DV-T1-E3
Manufacturer
Description
MOSFET P-CH 20V 3.8A 6-TSOP
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta)
Rds On (Max) @ Id, Vgs 54 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.14W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 54 mOhm @ 5A, 10V for MOSFET efficiency.

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