SQ3410EV-T1-GE3

SQ3410EV-T1-GE3
Attribute
Description
Manufacturer Part Number
SQ3410EV-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 8A TSOP-6
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Rds On (Max) @ Id, Vgs 17.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) @ Vds 1005pF @ 15V
Power - Max 5W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 17.5 mOhm @ 5A, 10V for MOSFET efficiency.

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