2SD2017

2SD2017

Data Sheet

Attribute
Description
Manufacturer Part Number
2SD2017
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 6A
Voltage - Collector Emitter Breakdown (Max) 250V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 2A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V
Power - Max 35W
Frequency - Transition 20MHz
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack

Description

Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.5V @ 2mA, 2A. Peak Vce(on) at Vge 6A for transistor parameters.

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