2SB1570
Data Sheet
Attribute
Description
Manufacturer Part Number
2SB1570
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | PNP - Darlington | |
| Current - Collector (Ic) (Max) | 12A | |
| Voltage - Collector Emitter Breakdown (Max) | 150V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 7mA, 7A | |
| Current - Collector Cutoff (Max) | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 7A, 4V | |
| Power - Max | 150W | |
| Frequency - Transition | 50MHz | |
| Mounting Type | Through Hole | |
| Package / Case | 3-ESIP |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 2.5V @ 7mA, 7A. Peak Vce(on) at Vge 12A for transistor parameters.
