2SD2560
Data Sheet
Attribute
Description
Manufacturer Part Number
2SD2560
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 8
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 679.66 | ₹ 679.66 |
| 3 | ₹ 601.09 | ₹ 1,803.27 |
| 10 | ₹ 539.56 | ₹ 5,395.60 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 15A | |
| Voltage - Collector Emitter Breakdown (Max) | 150V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 10A | |
| Current - Collector Cutoff (Max) | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 10A, 4V | |
| Power - Max | 130W | |
| Frequency - Transition | 70MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 2.5V @ 10mA, 10A. Peak Vce(on) at Vge 15A for transistor parameters.
