FDN306P

FDN306P
Attribute
Description
Manufacturer Part Number
FDN306P
Description
Transistor: P-MOSFET; unipolar; -1.8V; 2-16C1B
Note : GST will not be applied to orders shipping outside of India

Stock:
1000

Distributor: 12

Lead Time: Not specified

Quantity Unit Price Ext. Price
100 ₹ 19.97 ₹ 1,997.00

Stock:
74018

Distributor: 2

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 35.25 ₹ 35.25

Stock:
776

Distributor: 3

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 44.68 ₹ 44.68
10 ₹ 34.46 ₹ 344.60
100 ₹ 18.65 ₹ 1,865.00
1000 ₹ 14.01 ₹ 14,010.00

Stock:
572

Distributor: 1

Authorized

Lead Time: 3 Working Days


Quantity Unit Price Ext. Price
1 ₹ 49.84 ₹ 49.84

Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Rds On (Max) @ Id, Vgs 40 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1138pF @ 6V
Power - Max 460mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 40 mOhm @ 2.6A, 4.5V for MOSFET efficiency.

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