Attribute
Description
Manufacturer Part Number
SI2301-TP
Manufacturer
Description
SI2301 Series 20 V 120 mOhm SMT P-Channel Field Effect Trans...
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Stock: 520
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 36.00 | ₹ 36.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) | |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 2.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 450mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 14.5nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 880pF @ 6V | |
| Power - Max | 1.25W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 120 mOhm @ 2.8A, 4.5V for MOSFET efficiency.
