SI1025X-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI1025X-T1-GE3
Manufacturer
Description
MOSFET P-CH 60V 190MA SC-89
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | 2 P-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 190mA | |
| Rds On (Max) @ Id, Vgs | 4 Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 1.7nC @ 15V | |
| Input Capacitance (Ciss) @ Vds | 23pF @ 25V | |
| Power - Max | 250mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 |
Description
Measures resistance at forward current 2 P-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 4 Ohm @ 500mA, 10V for MOSFET efficiency.
