SI1026X-T1-GE3

SI1026X-T1-GE3
Attribute
Description
Manufacturer Part Number
SI1026X-T1-GE3
Manufacturer
Description
MOSFET, N CH, 60V, 0.305A, SC-89-6; Tran; MOSFET, N CH,...
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 305mA
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 0.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 250mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666

Description

Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 1.4 Ohm @ 500mA, 10V for MOSFET efficiency.

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